advanced power n-channel insulated gate electronics corp. features high speed switching low saturation voltage v ce(sat) =3.0v@i c =30a absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1.repetitive rating : pulse width limited by max . junction temperature . thermal data symbol rthj-c(igbt) rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units bv ces 1200 - - v i ges - - 500 na i ces --1ma v ce(sat) - 3 3.6 v - 3.8 - v v ge(th) 3 4.4 7 v q g -5588 nc q ge -12- nc q gc -27- nc t d(on) -20- ns t r -20- ns t d(off) -65- ns t f - 200 300 ns e on - 1.8 - mj e off - 1.1 - mj c ies - 1320 2110 pf c oes - 105 - pf c res -9- pf v f-1 - 1.7 2 v v f-2 - 1.8 2.4 v t rr -80- ns q rr -22- nc data and specifications subject to change without notice bipolar transistor with frd. maximum lead temp. for soldering purposes 300 gate-emitter voltage continuous collector current a reverse transfer capacitance t stg gate-collector charge total gate charge parameter gate-to-emitter leakage current turn-on delay time /w /w thermal resistance junction-case parameter value 0.6 thermal resistance junction-case 1.6 /w a AP30G120SW symbol v ces 1200v rating collector-emitter voltage units v 1200 f=1.0mhz -55 to 150 -55 to 150 v ge =15v, i c =30a v ce =v ge , i c =1ma i c =30a v ge =30v, v ce =0v v ge =0v, i c =250ua 40 v ge =0v w v cc =500v maximum power dissipation test conditions storage temperature range 208 collect-to-emitter breakdown voltage units v ge =15v thermal resistance junction-ambient rohs compliant output capacitance input capacitance p d @t c =25 t j i cm v ce =30v parameter 200630061-1/3 pb free plating product operating junction temperature range gate-emitter charge gate threshold voltage collector-emitter saturation voltage collector-emitter leakage current v ge =15v, i c =60a t l v ce =1200v, v ge =0v reverse recovery time i f =10a reverse recovery charge di/dt = 100 a/s forward voltage i f =10a forward voltage i f =20a i c @t c =100 i c @t c =25 continuous collector current electrical characteristics of diode@t j =25 (unless otherwise specified) v cc =600v, i c =30a, v ge =15v, r g =5 ? , inductive load rise time turn-off delay time fall time turn-on switching loss turn-off switching loss 75 a a co-pak, igbt with frd i f @t c =100 i fm diode continunous forward current diode pulse forward current pulsed collector current 1 v ge 30a v ces i c 12 v 160 a 30 30 60 g c e to-3p g c e
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2/3 AP30G120SW 0 40 80 120 160 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 20 40 60 80 100 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =60a i c =30a v ge =15v 0.5 0.8 1.1 1.4 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) t c =150 o c 0 20 40 60 80 100 120 140 160 024681012 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 : 1 100 10000 1 10 100 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 :
fig 7. turn-off soa fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. forward characteristic of fig 12. gate charge characterisitics diode 3/3 AP30G120SW 0 4 8 12 16 20 0 20406080 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =30a v cc =200v v cc =300v v cc =500v 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) t c =150 o c 1 10 100 1000 ? ?? ??? ???? ????? v ce , collector-emitter voltage(v) i c , peak collector current(a) safe operating area v ge =15v t c =125 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 5 10 15 0 0.4 0.8 1.2 1.6 2 2.4 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c i c =30a i c =15a i c =60a i c =30a i c =15a
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